| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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83 pcs
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83 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Vgs(th) (Max) @ Id |
The IRF840A from Infineon Technologies is an N-Channel MOSFET with a maximum drain-to-source voltage of 500V and a continuous drain current of 8A at 25°C. This component is built using MOSFET (Metal Oxide) technology and offers a low Rds On of 850 mOhm at 4.8A and 10V.
With a maximum power dissipation of 125W (Tc), the IRF840A is suitable for various power switching applications. It operates within a temperature range of -55°C to 150°C (TJ). The MOSFET features a gate threshold voltage of 4V at 250µA and a gate charge of 38nC at 10V. Input capacitance (Ciss) is rated at a maximum of 1018pF at 25V.
The component is supplied in a TO-220AB package, designed for through-hole mounting. Its specifications make it a reliable choice for power management circuits and general-purpose switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
8A at 25°C case temperature.
850mOhm maximum at 4.8A drain current and 10V gate-source voltage.
TO-220AB through-hole package.
-55°C to 150°C junction temperature.
4V maximum at 250µA drain current.
125W at case temperature.