IRF840A IRF840A is a 500V, 8A N-Channel Power MOSFET from Vishay Siliconix. It features low gate charge and is designed for high-speed power switching applications.
Mfr Part #:

IRF840A

Available from 3 distributors
Mfr Name: Vishay
Vishay
IRF840A is a 500V, 8A N-Channel Power MOSFET from Vishay Siliconix. It features low gate charge and is designed for high-speed power switching applications.
✓ Total Stock: 30,410 pcs

IRF840A Available from 3 distributors

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30,000 pcs
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300 pcs
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110 pcs
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IRF840A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF840A Description

Short technical summary and product information.

The IRF840A is a 500V, 8A N-Channel Power MOSFET manufactured by Vishay Siliconix. It is housed in a through-hole TO-220-3 package (TO-220AB). Key electrical specifications include a maximum drain-source voltage of 500V, continuous drain current of 8A at 25°C, and a maximum drain-source on-resistance of 850 mOhm at Vgs=10V. The device features a low gate charge of 38 nC, making it suitable for efficient switching in power conversion circuits.

 

This MOSFET is characterized for low gate charge, improved gate, avalanche, and dynamic dV/dt ruggedness. It is fully specified for capacitance and avalanche energy, with a single pulse avalanche energy rating of 510 mJ. The operating junction temperature range is -55°C to 150°C, and maximum power dissipation is 125W at 25°C case temperature.

 

Typical applications include switch mode power supplies (SMPS), uninterruptible power supplies, and high-speed power switching. It is suitable for topologies such as two-transistor forward, half bridge, and full bridge converters. The through-hole TO-220-3 package allows for easy mounting on heatsinks for thermal management.

IRF840A Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Vishay Siliconix IRF840A N-Channel Power MOSFET, 500V, 8A, TO-220-3
Subcategory: N-Channel MOSFET

IRF840A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF840A Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • Continuous drain current rating of 8A.
  • Low gate charge of 38 nC typical.
  • Maximum on-resistance of 850 mOhm.
  • Single pulse avalanche energy of 510 mJ.

IRF840A Applications

  • Ideal for switch mode power supplies.
  • Used in uninterruptible power supplies.
  • Suitable for high speed power switching.
  • Designed for two transistor forward converters.
  • Works in half and full bridge topologies.

IRF840A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF840A?

The maximum drain-source voltage is 500 V.

What package does the IRF840A come in?

The IRF840A is available in a TO-220-3 package (TO-220AB).

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRF840A RoHS compliant?

The part is listed as RoHS3 compliant, but this information is unverified.

What is the continuous drain current rating?

The continuous drain current is 8 A at Tc = 25°C.

What is the gate charge of the IRF840A?

The maximum gate charge is 38 nC at Vgs = 10 V.

What is the drain-source on-resistance?

The maximum on-resistance is 850 mOhm at Vgs = 10 V.

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