| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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38 pcs
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38 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Motorola IRF840 is a power MOSFET designed for various electronic applications. It is an N-Channel device with a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 8A at 25°C.
Key electrical characteristics include a maximum gate threshold voltage (Vgs(th)) of 4V at 250µA and a maximum on-resistance (Rds(on)) of 850mOhm when driven at 4.8A and 10V. The device can handle a maximum power dissipation of 125W (Tc).
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a TO-220AB case and utilizes a through-hole mounting type, making it suitable for through-hole PCB assemblies.
Additional specifications include an input capacitance (Ciss) of 1300pF at 25V and a gate charge (Qg) of 63nC at 10V. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the IRF840 is 500V.
The continuous drain current (Id) at 25°C for the IRF840 is 8A.
The maximum on-resistance (Rds(on)) for the IRF840 is 850mOhm at 4.8A and 10V.
The operating temperature range for the IRF840 is -55°C to 150°C.
The IRF840 is supplied in a TO-220AB package.
The IRF840 is mounted using the through-hole method.