| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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756 pcs
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756 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF840 is an N-Channel Power MOSFET from STMicroelectronics, designed for high voltage switching applications. It offers a drain-source voltage rating of 500V and continuous drain current of 8A at 25°C (5.1A at 100°C). The device features a maximum on-resistance of 0.85Ω at 10V gate drive, with a typical value of 0.75Ω. Gate charge is 39nC and input capacitance is 832pF, enabling efficient high-speed switching.
The MOSFET is avalanche rated with a single pulse energy capability of 520mJ. It is housed in a TO-220-3 through-hole package, suitable for easy mounting on heatsinks. Thermal resistance junction-to-case is 1°C/W, allowing effective thermal management.
Typical applications include switch mode power supplies (SMPS), DC-AC converters for welding equipment, uninterruptible power supplies, and motor drives. The device is 100% avalanche tested and offers extremely high dv/dt capability.
The maximum drain-source voltage (Vdss) is 500V.
The continuous drain current is 8A at Tc=25°C and 5.1A at Tc=100°C.
The maximum on-resistance is 0.85Ω at Id=3.5A, Vgs=10V; typical is 0.75Ω.
The maximum operating junction temperature is 150°C.
It is available in a TO-220-3 through-hole package.
It is listed as RoHS3 compliant, but this is unverified.
The maximum gate threshold voltage is 4V at Id=250µA, Vds=Vgs.