| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,100 pcs
|
8100 pcs | On Request | 1 | On Request | On Request | 2014+ | On Request | On Request | |
|
5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF840 is an N-Channel Power MOSFET utilizing PowerMesh II technology from Vishay Dale. It is designed for high-voltage, high-speed switching applications. Key electrical specifications include a maximum drain-source voltage of 500V, continuous drain current of 8A at 25°C (5.1A at 100°C), and a maximum on-resistance of 0.85Ω at Vgs=10V. The device is avalanche rated with a single pulse energy capability of 520mJ and features a peak diode recovery dv/dt of 3.5 V/ns. Gate charge is 63nC maximum, enabling efficient switching. Typical input capacitance is 832pF. The MOSFET is housed in a TO-220-3 through-hole package (TO-220AB) with a maximum power dissipation of 125W at 25°C case temperature. Operating junction temperature range is -55°C to 150°C. Typical applications include switch mode power supplies (SMPS), DC-AC converters for welding equipment, uninterruptible power supplies, and motor drives.
The maximum drain-source voltage is 500V.
The IRF840 is available in a TO-220-3 through-hole package (TO-220AB).
The operating junction temperature range is -55°C to 150°C.
The IRF840 is listed as RoHS3 Compliant, but this status is unverified.
Typical Rds(on) is 0.75Ω at Vgs=10V, Id=3.5A.
Maximum gate charge is 63nC at Vgs=10V.