IRF840 IRF840 is an N-Channel Power MOSFET from Vishay Dale with 500V drain-source voltage and 8A continuous drain current. It features a low on-resistance of 0.85Ω and is housed in a TO-220AB through-hole package.
Mfr Part #:

IRF840

Available from 3 distributors
Mfr Name: Vishay
Vishay
IRF840 is an N-Channel Power MOSFET from Vishay Dale with 500V drain-source voltage and 8A continuous drain current. It features a low on-resistance of 0.85Ω and is housed in a TO-220AB through-hole package.
✓ Total Stock: 13,950 pcs

IRF840 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,100 pcs
8100 pcs On Request 1 On Request On Request 2014+ On Request On Request
Non-Authorised Inventory information
5,750 pcs
5750 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request

IRF840 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF840 Description

Short technical summary and product information.

The IRF840 is an N-Channel Power MOSFET utilizing PowerMesh II technology from Vishay Dale. It is designed for high-voltage, high-speed switching applications. Key electrical specifications include a maximum drain-source voltage of 500V, continuous drain current of 8A at 25°C (5.1A at 100°C), and a maximum on-resistance of 0.85Ω at Vgs=10V. The device is avalanche rated with a single pulse energy capability of 520mJ and features a peak diode recovery dv/dt of 3.5 V/ns. Gate charge is 63nC maximum, enabling efficient switching. Typical input capacitance is 832pF. The MOSFET is housed in a TO-220-3 through-hole package (TO-220AB) with a maximum power dissipation of 125W at 25°C case temperature. Operating junction temperature range is -55°C to 150°C. Typical applications include switch mode power supplies (SMPS), DC-AC converters for welding equipment, uninterruptible power supplies, and motor drives.

IRF840 Quick Information

Product Type: MOSFET
Series: PowerMesh II
Canonical Name: IRF840 N-Channel MOSFET 500V 8A TO-220AB
Subcategory: N-Channel MOSFET

IRF840 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF840 Features

  • N-Channel Power MOSFET with 500V drain-source voltage.
  • Continuous drain current rating of 8A at 25°C.
  • Low on-resistance of 0.85Ω maximum.
  • Avalanche rated with 520mJ single pulse energy.
  • TO-220AB through-hole package for easy mounting.

IRF840 Applications

  • High current, high speed switching circuits.
  • Switch mode power supplies (SMPS).
  • DC-AC converters for welding equipment.
  • Uninterruptible power supplies and motor drives.

IRF840 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF840?

The maximum drain-source voltage is 500V.

What package does the IRF840 come in?

The IRF840 is available in a TO-220-3 through-hole package (TO-220AB).

What is the operating temperature range of the IRF840?

The operating junction temperature range is -55°C to 150°C.

Is the IRF840 RoHS compliant?

The IRF840 is listed as RoHS3 Compliant, but this status is unverified.

What is the typical on-resistance of the IRF840?

Typical Rds(on) is 0.75Ω at Vgs=10V, Id=3.5A.

What is the gate charge of the IRF840?

Maximum gate charge is 63nC at Vgs=10V.

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