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IRF8313TRPBF Dual N-channel HEXFET power MOSFET with 30V drain-source voltage and 9.7A continuous drain current in an SO-8 package.
Mfr Part #:

IRF8313TRPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-channel HEXFET power MOSFET with 30V drain-source voltage and 9.7A continuous drain current in an SO-8 package.
Total Stock: 2,646 pcs
$ Price Range: $0.27 - $1.25

IRF8313TRPBF Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,645 pcs
2645 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1 pcs
1 pcs On Request 1 On Request On Request On Request On Request On Request

IRF8313TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Continuous Drain Current (Nominal @ T_A = 70 °C, V_GS = -10 V)
Current
Drain to Source Voltage (Vdss)
Drain-Source On-Resistance (Typical/Maximum @ V_GS=4.5 V, I_D=8.0 A)
FET Feature
Forward Transconductance
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ T_A=70 °C)
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Drain Lead
Vgs(th) (Max) @ Id

IRF8313TRPBF Description

Short technical summary and product information.

The IRF8313TRPBF is a dual N-channel HEXFET power MOSFET from Infineon Technologies. It features a drain-source voltage rating of 30V and a continuous drain current of 9.7A at 25°C. The device is designed for low gate charge and low on-resistance, with a typical drain-source on-resistance of 12.5mOhm at VGS=10V. It is optimized for synchronous buck converters and other DC-DC conversion applications, offering reduced conduction and switching losses. The MOSFET is packaged in a surface-mount SO-8 package and is RoHS compliant and halogen free. It supports a logic-level gate and operates over a junction temperature range of -55°C to 175°C.

IRF8313TRPBF Quick Information

Product Type: MOSFET Array
Canonical Name: IRF8313TRPBF Dual N-Channel HEXFET Power MOSFET
Subcategory: Dual N-Channel Power MOSFET

IRF8313TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free (Qualified to 260°C Reflow)

IRF8313TRPBF Estimated Pricing

Qty Low High
1+ $1.25 $1.25
10+ $0.79 $0.79
100+ $0.52 $0.52
500+ $0.40 $0.40
4,000+ $0.31 $0.31
8,000+ $0.29 $0.29
12,000+ $0.27 $0.27
20,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF8313TRPBF Features

  • Dual N-channel logic-level HEXFET MOSFET.
  • 30V drain-source voltage rating.
  • 9.7A continuous drain current at 25°C.
  • 15.5mOhm maximum on-resistance at 10V.
  • Surface-mount SO-8 package.

IRF8313TRPBF Applications

  • Load switch for power management circuits.
  • DC-DC converter in notebook and netcom systems.
  • Synchronous buck converter topology.

IRF8313TRPBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IRF8313TRPBF?

30V.

What is the continuous drain current rating at 25°C?

9.7A at VGS=10V.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the IRF8313TRPBF RoHS compliant?

Yes, it is RoHS3 compliant and halogen free.

What is the package type?

8-SOIC (0.154", 3.90mm Width), supplier package 8-SO.

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