| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF8313PBF is a dual N-channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power conversion applications, featuring a maximum drain-source voltage of 30V and a continuous drain current of 9.7A at 25°C. The device offers a low maximum on-resistance of 15.5mΩ at VGS=10V, and a typical gate charge of 6.0nC at VGS=4.5V, which helps reduce both conduction and switching losses.
This MOSFET is optimized for synchronous buck converters and other DC-DC conversion circuits, where low Rds(on) and gate charge are critical for efficiency. The logic-level gate allows operation with 4.5V drive, and the device is fully characterized for avalanche voltage and current. The IRF8313PBF is housed in an industry-standard SO-8 package and is surface-mountable, suitable for compact PCB designs.
The device operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 2.0W at 25°C ambient. It is lead-free and RoHS compliant (halogen-free), meeting modern environmental requirements. The dual-channel configuration in a single package saves board space and simplifies layout in multi-phase or bridge applications.
The maximum drain-to-source voltage is 30V.
The maximum continuous drain current is 9.7A at TA=25°C with VGS=10V.
The maximum on-resistance is 15.5mΩ at VGS=10V and ID=9.7A, and 21.6mΩ at VGS=4.5V and ID=8.0A.
The operating junction temperature range is -55°C to 175°C.
Yes, the IRF8313PBF is RoHS compliant and halogen-free, as stated in the datasheet.
The IRF8313PBF is available in an 8-SOIC (0.154", 3.90mm Width) package, also known as 8-SO.
The gate threshold voltage ranges from 1.35V minimum to 2.35V maximum, with a typical value of 1.80V at ID=25µA.