IRF830PBF IRF830PBF is an N-Channel MOSFET from Vishay Dale with a 500V drain-source voltage rating and 4.5A continuous drain current. It is housed in a through-hole TO-220AB package.
Mfr Part #:

IRF830PBF

Available from 5 distributors
Mfr Name: Vishay
Vishay
IRF830PBF is an N-Channel MOSFET from Vishay Dale with a 500V drain-source voltage rating and 4.5A continuous drain current. It is housed in a through-hole TO-220AB package.
✓ Total Stock: 9,100 pcs
$ Price Range: $1.26 - $3.45

IRF830PBF Available from 5 distributors

✓ Authorised
✓ Non-Authorised

IRF830PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF830PBF Description

Short technical summary and product information.

The IRF830PBF is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale using Metal Oxide (MOSFET) technology. It is designed for high-voltage switching applications, featuring a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 4.5A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 1.5 Ohm at a gate drive of 10V and a drain current of 2.7A. The device has a maximum gate threshold voltage (Vgs(th)) of 4V at 250µA drain current. Gate charge is specified at 38 nC maximum at Vgs=10V, and input capacitance (Ciss) is 610 pF maximum at Vds=25V. The maximum power dissipation is 74W at case temperature.

 

The IRF830PBF is packaged in a through-hole TO-220-3 package (supplier device package TO-220AB), suitable for PCB mounting. It operates over a junction temperature range of -55°C to 150°C. The maximum gate-source voltage is ±20V.

IRF830PBF Quick Information

Product Type: MOSFET
Series: IRF830
Canonical Name: IRF830PBF N-Channel MOSFET
Subcategory: Single N-Channel

IRF830PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: Non-Compliant

IRF830PBF Estimated Pricing

Qty Low High
1+ $3.45 $3.45
10+ $2.24 $2.24
50+ $1.72 $1.72
100+ $1.56 $1.56
500+ $1.26 $1.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF830PBF Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • Continuous drain current rated at 4.5A.
  • Low on-resistance of 1.5 Ohm maximum.
  • Through-hole TO-220AB package for easy mounting.
  • Operates over -55°C to 150°C temperature range.

IRF830PBF Applications

  • High-voltage DC-DC converter circuits.
  • Switch-mode power supply designs.
  • Motor control and drive applications.
  • Power management in industrial equipment.

IRF830PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF830PBF?

The maximum drain-source voltage (Vdss) is 500V.

What is the continuous drain current rating of the IRF830PBF?

The continuous drain current (Id) at 25°C case temperature is 4.5A.

What is the operating temperature range of the IRF830PBF?

The operating junction temperature range is -55°C to 150°C.

What package does the IRF830PBF come in?

The IRF830PBF is available in a through-hole TO-220-3 package (TO-220AB).

What is the on-resistance of the IRF830PBF?

The maximum on-resistance (Rds(on)) is 1.5 Ohm at Vgs=10V and Id=2.7A.

What is the gate threshold voltage of the IRF830PBF?

The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.

Is the IRF830PBF RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this data is unverified and has low confidence.

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