| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF830 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It features a drain-to-source voltage (Vdss) of 500V and a continuous drain current of 4.5A at case temperature Tc. The device has a maximum on-resistance (Rds(on)) of 1.5 Ohms at Vgs=10V and Id=2.7A. Gate charge is 38 nC at Vgs=10V, and input capacitance is 610 pF at Vds=25V. The gate threshold voltage is 4V at Id=250µA. Maximum power dissipation is 74W at Tc. The operating junction temperature range is -55°C to 150°C. The MOSFET is housed in a TO-220-3 through-hole package (TO-220AB). It is suitable for switching and amplification applications requiring high voltage capability. The device is RoHS3 compliant and has MSL level 1 (unlimited). Note: Compliance data is unverified. The part is cross-referenced as Digi-Key part number IRF830IR-ND.
500V.
4.5A at case temperature Tc.
1.5 Ohm maximum at Vgs=10V, Id=2.7A.
TO-220-3 (TO-220AB) through-hole.
-55°C to 150°C junction temperature.
RoHS3 compliant (unverified).
38 nC maximum at Vgs=10V.