| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF830 is an N-Channel power MOSFET manufactured by Harris Semiconductor. It features a maximum drain-to-source voltage of 500V and a continuous drain current of 4.5A at case temperature. The device has a maximum on-resistance of 1.5 Ohms at a gate-source voltage of 10V and drain current of 2.5A. Gate charge is 32 nC at 10V, and input capacitance is 600 pF at 25V drain-source voltage. The gate threshold voltage is 4V maximum at 250µA drain current. The MOSFET is designed for through-hole mounting in a TO-220-3 package (supplier device package TO-220AB). It can dissipate up to 75W at case temperature and operates over a junction temperature range of -55°C to 150°C. This component is suitable for high-voltage switching applications such as power supplies, motor controls, and DC-DC converters.
500V maximum.
4.5A at case temperature (Tc).
1.5 Ohm maximum at Id=2.5A, Vgs=10V.
-55°C to 150°C junction temperature.
TO-220-3 (through-hole), supplier device package TO-220AB.
RoHS3 Compliant (unverified).
4V maximum at Id=250µA.