| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF820SPBF is an N-Channel power MOSFET from Vishay Siliconix, designed for high-voltage switching applications. It features a maximum drain-source voltage of 500V and a continuous drain current of 2.5A at 25°C case temperature. The device offers a low on-resistance of 3 Ohm maximum at 10V gate drive, ensuring efficient power handling.
This MOSFET utilizes third-generation power MOSFET technology, providing fast switching and ruggedized performance. It is avalanche rated and supports repetitive avalanche energy up to 210 mJ. The gate charge is 24 nC maximum, and input capacitance is 360 pF, making it suitable for moderate frequency switching.
The IRF820SPBF is available in the D2PAK (TO-263) surface mount package, which offers high power dissipation capability of up to 50W at case temperature. It is designed for surface mount assembly and is available in tape and reel packaging for automated manufacturing. The device is RoHS compliant and lead-free, with an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
D2PAK (TO-263) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant (unverified).
2.5A at 25°C case temperature.
4V maximum at 250µA drain current.