IRF820PBF N-Channel power MOSFET with 500V drain-source breakdown voltage and 2.5A continuous drain current. Housed in a TO-220AB through-hole package.
Mfr Part #:

IRF820PBF

Available from 4 distributors
Mfr Name: Vishay
Vishay
N-Channel power MOSFET with 500V drain-source breakdown voltage and 2.5A continuous drain current. Housed in a TO-220AB through-hole package.
✓ Total Stock: 23,639 pcs
$ Price Range: $1.21 - $3.33

IRF820PBF Available from 4 distributors

✓ Authorised
✓ Non-Authorised

IRF820PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF820PBF Description

Short technical summary and product information.

The IRF820PBF is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and ruggedized performance. It features a drain-source breakdown voltage of 500V and a continuous drain current of 2.5A at 25°C case temperature, derated to 1.6A at 100°C. The maximum on-resistance is 3Ω at Vgs=10V and Id=1.5A, ensuring low conduction losses. With a total gate charge of 24nC and input capacitance of 360pF, the device offers efficient gate drive characteristics.

 

The MOSFET is avalanche rated, with single pulse avalanche energy of 210mJ and repetitive avalanche energy of 5.0mJ, making it suitable for applications requiring robust transient handling. The TO-220AB package provides low thermal resistance (junction-to-case 2.5°C/W) and is compatible with through-hole mounting. The operating junction temperature range is -55°C to 150°C, and the device is RoHS3 compliant (unverified). Typical applications include switch-mode power supplies, motor control circuits, and high-voltage DC-DC converters.

IRF820PBF Quick Information

Product Type: Power MOSFET
Series: IRF820
Canonical Name: IRF820PBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRF820PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: Non-Compliant

IRF820PBF Estimated Pricing

Qty Low High
1+ $3.33 $3.33
10+ $2.16 $2.16
50+ $1.66 $1.66
100+ $1.50 $1.50
500+ $1.21 $1.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF820PBF Features

  • N-Channel enhancement mode power MOSFET.
  • 500V drain-source breakdown voltage.
  • 2.5A continuous drain current at 25°C.
  • Low on-resistance of 3Ω at 10V gate drive.
  • TO-220AB through-hole package.

IRF820PBF Applications

  • Used in switch-mode power supplies.
  • Ideal for motor control circuits.
  • Suitable for high-voltage DC-DC converters.
  • Applicable in lighting ballasts.

IRF820PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRF820PBF?

500V.

What package does the IRF820PBF come in?

TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the IRF820PBF RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the maximum drain-source on-resistance?

3Ω at Vgs=10V and Id=1.5A.

What is the maximum continuous drain current?

2.5A at case temperature 25°C, derated to 1.6A at 100°C.

What is the gate threshold voltage?

Maximum 4V at Id=250µA.

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