| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
52 pcs
|
52 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF820LPBF is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for high-voltage switching applications with a drain-source voltage rating of 500V and continuous drain current of 2.5A at case temperature.
The device features a maximum on-resistance of 3 Ohms at 1.5A drain current and 10V gate drive. Gate charge is 24 nC at 10V, and input capacitance is 360 pF at 25V drain-source. The gate threshold voltage is 4V maximum at 250µA. Maximum gate-source voltage is ±20V.
The MOSFET is housed in a TO-262-3 (I2PAK) through-hole package with long leads. It can dissipate up to 3.1W at ambient temperature and 50W at case temperature. Operating junction temperature range is -55°C to 150°C.
This device is suitable for high-voltage switching circuits such as power supplies, inverters, and motor controls where low gate drive requirements and fast switching are needed. The through-hole I2PAK package allows for easy mounting on PCBs or heatsinks.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.91 | $0.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
TO-262-3 (I2PAK) through-hole package.
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant (unverified).
3 Ohms at 1.5A and 10V gate drive.
24 nC at 10V gate-source voltage.
360 pF at 25V drain-source voltage.