| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF820ASPBF is an N-Channel Power MOSFET from Vishay Dale, designed for high-voltage switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 2.5A at 25°C case temperature, with a maximum on-resistance of 3Ω at Vgs=10V. The device is housed in a D2PAK (TO-263) surface mount package, suitable for automated assembly.
This MOSFET offers low gate charge (17nC typical) for simplified drive requirements and is characterized for avalanche and dynamic dV/dt ruggedness. It is capable of dissipating up to 50W at 25°C case temperature, with an operating junction temperature range of -55°C to 150°C. Typical applications include switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed power switching circuits.
The IRF820ASPBF is lead (Pb)-free and RoHS3 compliant (unverified). It is a direct alternative to the halogen-free SiHF820AS-GE3 and the I2PAK variant IRF820ALPbF.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.38 | $2.38 |
| 10+ | $1.52 | $1.52 |
| 50+ | $1.15 | $1.15 |
| 100+ | $1.04 | $1.04 |
| 500+ | $0.83 | $0.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package D²PAK (TO-263).
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
500V.
2.5A at Tc=25°C, 1.6A at Tc=100°C.
3Ω maximum at Id=1.5A, Vgs=10V.
17 nC maximum at Vgs=10V.