SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,981 pcs
|
2981 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel |
The IRF820 is an N-Channel Power MOSFET manufactured by N-A, designed using advanced strip layout-based MESH OVERLAY process for improved performance. This component is suitable for high current and high speed switching applications, including Switch Mode Power Supplies (SMPS).
Key electrical specifications include a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 3A. The typical on-resistance (Rds(on)) is 0.54 Ohms at a gate-source voltage (Vgs) of 10V. It also features a typical gate charge of 41 nC and input capacitance of 35 pF, contributing to its fast switching capabilities.
The IRF820 is 100% avalanche tested and offers improved dv/dt capability. Its N-Channel MOSFET design makes it a versatile component for power electronics circuits. The component is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF820 is 500V.
The typical drain current of the IRF820 is 3A.
The typical Rds(on) for the IRF820 at Vgs = 10V is 0.54 Ohms.
The typical gate charge for the IRF820 is 41 nC.
The IRF820 is an N-Channel Power MOSFET.
The IRF820 is suitable for high current, high speed switching, and Switch Mode Power Supplies (SMPS).
