Mfr Part #:

IRF820

Available from 4 distributors

Mfr Name: Vishay

IRF820 is a 500V N-Channel MOSFET with 2.5A continuous drain current, in a TO-220AB package.

✓ Total Stock: 717 pcs

IRF820 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	559 pcs On Request	559 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	64 pcs On Request	64 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Emiteli ✓ Non-Authorised Inventory information	64 pcs On Request	64 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Partservice ✓ Non-Authorised Inventory information	30 pcs On Request	30 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRF820 Description

Short technical summary and product information.

The IRF820 is an N-Channel enhancement-mode MOSFET from Vishay Dale, designed for high-voltage switching applications. It features a maximum drain-source voltage (Vdss) of 500V and a continuous drain current of 2.5A at case temperature. The on-resistance is typically 3 Ohm at a gate drive voltage of 10V and a drain current of 1.5A, ensuring efficient conduction in switched-mode circuits.

This MOSFET uses metal-oxide semiconductor technology and requires a gate drive voltage of 10V to achieve low Rds(on). The maximum gate-source voltage is ±20V, allowing flexible drive levels. The device is housed in a TO-220AB package, which provides through-hole mounting for easy integration into power supply and motor control boards.

Typical applications include switch-mode power supplies, DC-DC converters, and general-purpose power switching where high voltage and moderate current are required. The IRF820 is a suitable choice for designs that need a robust, cost-effective high-voltage N-Channel MOSFET.

IRF820 Quick Information

Product Type: MOSFET

Canonical Name: IRF820 N-Channel MOSFET

Subcategory: Single N-Channel MOSFET

IRF820 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1

REACH Status: Non-Compliant

IRF820 Features

N-Channel enhancement-mode MOSFET.
500V maximum drain-source voltage.
2.5A continuous drain current rating.
3 Ohm on-resistance at 10V gate drive.
TO-220AB through-hole package.

IRF820 Applications

High-voltage switch-mode power supplies.
DC-DC converter circuits.
General purpose power switching.

IRF820 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IRF820?

500V

What is the continuous drain current rating?

2.5A at case temperature

What is the on-resistance (Rds(on))?

3 Ohm maximum at 1.5A drain current and 10V gate voltage

What is the recommended gate drive voltage?

10V

What is the maximum gate-source voltage allowed?

±20V

IRF820 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.

View All Alternate Parts

IRF820PBF-BE3

Vishay

MOSFET N-CH 500V 2.5A TO220AB

View Part

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	2.5A (Tc)
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	50W (Tc)
Rds On (Max) @ Id, Vgs	3Ohm @ 1.5A, 10V
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA