| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF820 is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications requiring a drain-to-source voltage (Vdss) of 500V and continuous drain current (Id) of 2.5A at case temperature (Tc). The device features a maximum on-resistance (Rds(on)) of 3 Ohm at a gate drive of 10V and 1.5A drain current.
Key electrical characteristics include a maximum gate charge (Qg) of 24 nC at Vgs=10V, input capacitance (Ciss) of 360 pF at Vds=25V, and a maximum gate threshold voltage (Vgs(th)) of 4V at Id=250µA. The maximum gate-source voltage is ±20V, and the recommended drive voltage for achieving minimum Rds(on) is 10V.
The MOSFET is housed in a standard TO-220-3 through-hole package (supplier device package TO-220AB), suitable for PCB mounting. It can dissipate up to 50W of power at case temperature and operates over a junction temperature range of -55°C to 150°C. This part is commonly used in power supply circuits, motor controllers, and other high-voltage switching applications.
| Qty | Low | High |
|---|---|---|
| 343+ | $0.88 | $0.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 500V.
The continuous drain current (Id) is 2.5A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 3 Ohm at Vgs=10V and Id=1.5A.
The IRF820 is available in a TO-220-3 through-hole package (supplier device package TO-220AB).
The junction temperature range is -55°C to 150°C.
The maximum power dissipation is 50W at case temperature (Tc).
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.