| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF820 is an N-Channel enhancement-mode MOSFET manufactured by Harris Semiconductor. It is designed for high-voltage switching applications with a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current of 4A at case temperature. The device features a maximum on-resistance of 3 Ohms at Vgs=10V and Id=1.5A, ensuring efficient conduction.
Key electrical characteristics include a gate threshold voltage of 4V max, gate charge of 17nC at 10V, and input capacitance of 315pF at 25V. The maximum power dissipation is 80W at case temperature, with an operating junction temperature range up to 150°C.
The IRF820 is packaged in a through-hole TO-220-3 case with a supplier device package of TO-220AB, suitable for standard PCB mounting. It is RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 343+ | $0.88 | $0.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
N-Channel MOSFET.
500V maximum.
4A at case temperature (Tc).
3 Ohm at Id=1.5A, Vgs=10V.
TO-220-3 (through-hole, supplier device package TO-220AB).
150°C (junction temperature).
Yes, RoHS3 compliant.