| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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95 pcs
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95 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF8113TRPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for applications requiring low on-resistance and fast switching. The device features a drain-source breakdown voltage of 30V and a continuous drain current of 17.2A at 25°C ambient. The on-resistance is typically 4.7mΩ at 10V gate drive, with a maximum of 5.6mΩ. At 4.5V gate drive, typical on-resistance is 5.8mΩ. The gate threshold voltage ranges from 1.5V to 2.2V. The device has low gate charge (24nC typical) and fast switching times (turn-on delay 13ns, rise time 8.9ns, turn-off delay 17ns, fall time 3.5ns). It is suitable for synchronous MOSFET applications in notebook processors and isolated DC-DC converters. The MOSFET is housed in an 8-SOIC surface-mount package (8-SO) and is lead-free. The operating junction temperature range is -55°C to 150°C. The device is 100% tested for on-resistance and avalanche characteristics.
30V
Typical 4.7mΩ, maximum 5.6mΩ
1.5V minimum, 2.2V maximum
8-SOIC (8-SO)
-55°C to 150°C
RoHS3 Compliant (unverified)
17.2A