| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The Vishay Dale IRF8113PBF is an N-Channel HEXFET Power MOSFET housed in an industry-standard SO-8 package. It is engineered for applications such as synchronous rectification in isolated DC-DC converters and synchronous MOSFETs for notebook processor power.
Key electrical characteristics include a Drain-to-Source Breakdown Voltage (BVDSS) of 30V and a maximum Continuous Drain Current (ID) of 17.2A at TA = 25°C with VGS = 10V. The Static Drain-to-Source On-Resistance (RDS(on)) is as low as 5.6mΩ typical at VGS = 10V and 6.8mΩ typical at VGS = 4.5V, ensuring efficient power transfer.
This MOSFET features a low gate charge (Qg) of 24nC typical, contributing to fast switching speeds. It also has fully characterized avalanche voltage and current capabilities, along with 100% tested RG. The device operates with a Gate Threshold Voltage (VGS(th)) between 1.5V and 2.2V.
Designed for surface mounting, the SO-8 package is compatible with existing surface mount equipment. The IRF8113PBF is lead-free and suitable for various power management designs requiring efficient switching and low conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the IRF8113PBF is 17.2A at TA = 25°C with VGS = 10V.
The typical static drain-to-source on-resistance (RDS(on)) for the IRF8113PBF at VGS = 10V is 5.6mΩ.
The drain-to-source breakdown voltage (BVDSS) of the IRF8113PBF is 30V.
The typical total gate charge (Qg) for the IRF8113PBF is 24nC.
The IRF8113PBF is available in the SO-8 package.
The IRF8113PBF is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF8113PBF is 1 Unlimited.