| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75 pcs
|
75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF8010STRLPBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power conversion. It features a drain-source voltage of 100V and a continuous drain current of 80A at 25°C case temperature.
Key electrical characteristics include a low typical on-resistance of 12 mΩ (max 15 mΩ) at Vgs=10V, and a gate threshold voltage range of 2.0V to 4.0V. The device offers fast switching with typical turn-on delay of 15 ns and rise time of 130 ns.
The MOSFET is housed in a surface-mount D2PAK (TO-263) package, suitable for automated assembly. It is RoHS compliant and has an operating junction temperature range of -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.46 | $3.46 |
| 10+ | $2.25 | $2.25 |
| 50+ | $1.73 | $1.73 |
| 100+ | $1.56 | $1.56 |
| 800+ | $1.20 | $1.20 |
| 2,400+ | $1.08 | $1.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
80A at 25°C case temperature.
Maximum 15 mΩ at Vgs=10V, Id=45A; typical 12 mΩ.
-55°C to 175°C junction temperature.
Surface mount D2PAK (TO-263) package.
RoHS3 compliant (unverified).
Maximum total gate charge is 120 nC at Vgs=10V.