| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF8010PBF from International Rectifier is a HEXFET Power MOSFET designed for high-frequency DC-DC converters, UPS, and motor control applications. This N-channel MOSFET features a drain-to-source breakdown voltage of 100V and a low static drain-to-source on-resistance, typically 12mΩ and a maximum of 15mΩ at 25°C.
Key electrical characteristics include a continuous drain current of up to 80A at 25°C and a pulsed drain current of 320A. The device offers low gate-to-drain charge to reduce switching losses and fully characterized capacitance. It is packaged in a standard TO-220AB through-hole package, suitable for various power management designs.
With a maximum power dissipation of 260W at 25°C and a junction-to-case thermal resistance of 0.57°C/W, the IRF8010PBF is designed for efficient operation. The operating junction and storage temperature range is -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (V(BR)DSS) is 100V.
The typical static drain-to-source on-resistance (RDS(on)) is 12 milliohms at TJ = 25°C.
The maximum gate threshold voltage (VGS(th)) is 4.0 V.
The maximum continuous drain current (ID) is 80 A at 25°C.
It comes in a TO-220AB package.
Yes, it is RoHS3 compliant.