| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,700 pcs
|
4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF8010PBF is an N-Channel power MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 100V and a continuous drain current of 80A at 25°C case temperature. The typical on-resistance is 12mΩ, with a maximum of 15mΩ measured at 45A drain current and 10V gate drive. The device is based on HEXFET technology and is designed for high-frequency switching applications such as DC-DC converters, UPS systems, and motor control.
The MOSFET offers a total gate charge of 120nC (max) at 10V, with input capacitance of 3830pF, output capacitance of 480pF, and reverse transfer capacitance of 59pF. Switching times are characterized with a typical turn-on delay of 15ns, rise time of 130ns, turn-off delay of 61ns, and fall time of 120ns. The device is capable of handling pulsed drain currents up to 320A.
The IRF8010PBF is housed in a TO-220AB through-hole package with a maximum power dissipation of 260W at 25°C case temperature. It operates over a junction temperature range of -55°C to +175°C. Thermal resistance from junction to case is 0.57°C/W, and from junction to ambient is 62°C/W. The component is listed as RoHS3 compliant, REACH unaffected, and has an MSL rating of 1, though these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
| 10+ | $1.63 | $1.63 |
| 50+ | $1.24 | $1.24 |
| 100+ | $1.11 | $1.11 |
| 500+ | $0.89 | $0.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage (Vdss) is 100 V.
It is available in a TO-220-3 through-hole package, specifically the TO-220AB supplier device package.
The operating junction temperature range is -55°C to +175°C.
The component is listed as RoHS3 Compliant, but this status is unverified and should be confirmed.
The typical drain-source on-resistance is 12 mΩ at 45 A drain current and 10 V gate drive.
The maximum continuous drain current is 80 A at 25°C case temperature with Vgs = 10 V.
The maximum total gate charge (Qg) is 120 nC at Vgs = 10 V, Vds = 80 V, and Id = 80 A.