IRF7907TRPBF Dual N-Channel MOSFET array with 30V drain-source voltage, 9.1A (Q1) and 11A (Q2) continuous drain current, in a surface-mount 8-SOIC package.
Mfr Part #:

IRF7907TRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-Channel MOSFET array with 30V drain-source voltage, 9.1A (Q1) and 11A (Q2) continuous drain current, in a surface-mount 8-SOIC package.
✓ Total Stock: 1,420 pcs
$ Price Range: $0.30 - $1.37

IRF7907TRPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,420 pcs
1420 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7907TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

IRF7907TRPBF Description

Short technical summary and product information.

The IRF7907TRPBF is a dual N-channel MOSFET array in a compact 8-SOIC surface-mount package. It integrates two independent MOSFETs (Q1 and Q2) with a maximum drain-to-source voltage of 30V. Q1 offers a continuous drain current of 9.1A (at 25°C) and Q2 offers 11A, with pulsed current capabilities of 76A and 85A respectively. The device features logic level gate drive, with gate threshold voltage typically 1.8V, enabling direct drive from low-voltage logic.

 

Static drain-to-source on-resistance is very low: 16.4mΩ for Q1 and 11.8mΩ for Q2 at 10V gate drive, and 20.5mΩ / 13.7mΩ at 4.5V. Gate charge is 10nC (max) for Q1 and 21nC (max) for Q2 at 4.5V, supporting efficient switching. Input capacitance is 850pF (max) at 15V drain bias.

 

Designed for point-of-load (POL) converters in notebooks, servers, graphics cards, game consoles, and set-top boxes. The device is lead-free (PbF) and RoHS compliant (unverified). Operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 2W at 25°C ambient.

IRF7907TRPBF Quick Information

Product Type: MOSFET Array
Series: HEXFET
Canonical Name: IRF7907TRPBF Dual N-Channel MOSFET 30V 9.1A/11A 8-SOIC
Subcategory: Dual N-Channel MOSFET Array

IRF7907TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF7907TRPBF Estimated Pricing

Qty Low High
1+ $1.37 $1.37
10+ $0.86 $0.86
50+ $0.64 $0.64
100+ $0.57 $0.57
500+ $0.44 $0.44
4,000+ $0.34 $0.34
12,000+ $0.30 $0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7907TRPBF Features

  • Dual N-channel MOSFET in one package.
  • Low on-resistance: 16.4mΩ (Q1) at 10V.
  • Logic level gate drive capable.
  • Surface mount 8-SOIC package.
  • Operating temperature range -55°C to 150°C.

IRF7907TRPBF Applications

  • Point-of-load converters in notebooks and servers.
  • DC-DC converters in graphics cards and game consoles.
  • Power management in set-top boxes.
  • Load switching and battery protection circuits.

IRF7907TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IRF7907TRPBF?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current rating for each MOSFET?

Q1 is rated for 9.1A and Q2 is rated for 11A at 25°C with VGS = 10V.

What package is the IRF7907TRPBF available in?

It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, with supplier device package 8-SO.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this device RoHS compliant?

RoHS compliance is indicated as RoHS3 compliant, but this data is unverified. The datasheet states the device is Lead-Free (PbF).

What is the typical gate threshold voltage?

The typical gate threshold voltage (Vgs(th)) is 1.8V, with a range of 1.35V (min) to 2.35V (max).

What is the on-resistance at 10V gate drive?

For Q1, Rds(on) is 16.4mΩ maximum at VGS=10V, ID=9.1A. For Q2, it is 11.8mΩ maximum at VGS=10V, ID=11A.

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