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IRF7902PBF Dual N-Channel MOSFET, 30V, 6.4A/9.7A, logic level gate, SO-8 package.
Mfr Part #:

IRF7902PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-Channel MOSFET, 30V, 6.4A/9.7A, logic level gate, SO-8 package.
✓ Total Stock: 3,000 pcs

IRF7902PBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
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IRF7902PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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IRF7902PBF Description

Short technical summary and product information.

The IRF7902PBF is a dual N-Channel MOSFET from Infineon Technologies, part of the HEXFET family. It features two independent N-Channel MOSFETs in a single SO-8 package, with a drain-source breakdown voltage of 30V. The Q1 channel supports a continuous drain current of 6.4A at 25°C (5.1A at 70°C) with a typical on-resistance of 18.1 mΩ at 10V. The Q2 channel supports 9.7A (7.8A at 70°C) with a typical on-resistance of 11.5 mΩ. Both channels feature logic level gate drive, allowing operation at 4.5V gate voltage. The device is designed for point-of-load converters in notebook computers, servers, graphics cards, and game consoles. It is surface mountable in an 8-SOIC package with a junction temperature range of -55°C to 150°C.

IRF7902PBF Quick Information

Product Type: MOSFET Array
Canonical Name: IRF7902PBF - Dual N-Channel MOSFET, 30V, 6.4A/9.7A, SO-8
Subcategory: MOSFET Arrays

IRF7902PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IRF7902PBF Features

  • Dual N-Channel MOSFET in SO-8 package.
  • Low on-resistance: 18.1 mΩ typical (Q1).
  • Logic level gate drive at 4.5V.
  • 30V drain-source breakdown voltage.
  • RoHS compliant and lead-free.

IRF7902PBF Applications

  • Used in point-of-load DC-DC converters.
  • Suitable for notebook computer power supplies.
  • Ideal for server and graphics card voltage regulation.
  • Applicable in game console power management.

IRF7902PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRF7902PBF?

The drain-source breakdown voltage is 30V minimum.

What package is the IRF7902PBF available in?

It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also known as SO-8.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRF7902PBF RoHS compliant?

Yes, it is RoHS3 compliant and lead-free, though compliance is unverified.

What is the continuous drain current rating?

Q1: 6.4A at 25°C (5.1A at 70°C); Q2: 9.7A at 25°C (7.8A at 70°C) with VGS=10V.

What is the typical on-resistance?

Q1: 18.1 mΩ typical at VGS=10V; Q2: 11.5 mΩ typical at VGS=10V.

What is the total gate charge?

Q1: 4.6 nC typical; Q2: 6.5 nC typical at VDS=15V, VGS=4.5V.

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