| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage Temperature Coefficient (Typical) | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA = +70 °C, VGS = 10 V) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Leakage Current (Maximum @ VDS=30 V, TJ=150 °C) | |
| Drain-to-Source Leakage Current (Maximum @ VDS=30 V, TJ=25 °C) | |
| FET Feature | |
| Fall Time (Typical @ VDS=15 V, ID=5.1 A, VGS=4.5 V, RG=3.1Ω) | |
| Fall Time (Typical @ VDS=15 V, ID=7.8 A, VGS=4.5 V, RG=3.1Ω) | |
| Forward Transconductance (Minimum @ VDS=15 V, ID=5.1 A) | |
| Forward Transconductance (Minimum @ VDS=15 V, ID=7.8 A) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge Overdrive (Typical @ VDS=15 V, VGS=4.5 V, ID=5.1 A) | |
| Gate Charge Overdrive (Typical @ VDS=15 V, VGS=4.5 V, ID=7.8 A) | |
| Gate Resistance (Q1 & Q2) | |
| Gate Threshold Voltage Coefficient (Typical) | |
| Gate to Source Leakage Current (Maximum @ VGS = ±20 V) | |
| Gate-to-Drain Charge (Typical @ VDS=15 V, VGS=4.5 V, ID=5.1 A) | |
| Gate-to-Drain Charge (Typical @ VDS=15 V, VGS=4.5 V, ID=7.8 A) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Typical @ VDS=15 V) | |
| Output Charge (Typical @ VDS=15 V) | |
| Package Type | |
| Post-Vth Gate-to-Source Charge (Typical @ VDS=15 V, VGS=4.5 V, ID=5.1 A) | |
| Post-Vth Gate-to-Source Charge (Typical @ VDS=15 V, VGS=4.5 V, ID=7.8 A) | |
| Power | |
| Power Dissipation (Maximum @ TA=70 °C) | |
| Pre-Vth Gate-to-Source Charge (Typical @ VDS=15 V, VGS=4.5 V, ID=5.1 A) | |
| Pre-Vth Gate-to-Source Charge (Typical @ VDS=15 V, VGS=4.5 V, ID=7.8 A) | |
| Pulsed Drain Current (Maximum @ TA=25 °C) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance (Typical @ VDS=15 V) | |
| Rise Time (Typical @ VDS=15 V, ID=5.1 A, VGS=4.5 V, RG=3.1Ω) | |
| Rise Time (Typical @ VDS=15 V, ID=7.8 A, VGS=4.5 V, RG=3.1Ω) | |
| Static Drain-Source On-Resistance (Typical/Maximum @ VGS=10 V, ID=9.7 A) | |
| Static Drain-Source On-Resistance (Typical/Maximum @ VGS=4.5 V, ID=5.1 A) | |
| Static Drain-Source On-Resistance (Typical/Maximum @ VGS=4.5 V, ID=7.8 A) | |
| Supplier Device Package | |
| Switch Charge (Typical @ VDS=15 V, VGS=4.5 V, ID=5.1 A) | |
| Switch Charge (Typical @ VDS=15 V, VGS=4.5 V, ID=7.8 A) | |
| Technology | |
| Thermal Resistance, Junction-to-Ambient (Maximum @ SO -8, mounted on PCB) | |
| Thermal Resistance, Junction-to-Lead (Q1 & Q2) | |
| Total Gate Charge (Typical/Maximum @ VDS=15 V, VGS=4.5 V, ID=7.8 A) | |
| Turn-Off Delay Time (Typical @ VDS=15 V, ID=5.1 A, VGS=4.5 V, RG=3.1Ω) | |
| Turn-Off Delay Time (Typical @ VDS=15 V, ID=7.8 A, VGS=4.5 V, RG=3.1Ω) | |
| Turn-On Delay Time (Typical @ VDS=15 V, ID=5.1 A, VGS=4.5 V, RG=3.1Ω) | |
| Turn-On Delay Time (Typical @ VDS=15 V, ID=7.8 A, VGS=4.5 V, RG=3.1Ω) | |
| Vgs(th) (Max) @ Id |
The IRF7902PBF is a dual N-Channel MOSFET from Infineon Technologies, part of the HEXFET family. It features two independent N-Channel MOSFETs in a single SO-8 package, with a drain-source breakdown voltage of 30V. The Q1 channel supports a continuous drain current of 6.4A at 25°C (5.1A at 70°C) with a typical on-resistance of 18.1 mΩ at 10V. The Q2 channel supports 9.7A (7.8A at 70°C) with a typical on-resistance of 11.5 mΩ. Both channels feature logic level gate drive, allowing operation at 4.5V gate voltage. The device is designed for point-of-load converters in notebook computers, servers, graphics cards, and game consoles. It is surface mountable in an 8-SOIC package with a junction temperature range of -55°C to 150°C.
The drain-source breakdown voltage is 30V minimum.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also known as SO-8.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and lead-free, though compliance is unverified.
Q1: 6.4A at 25°C (5.1A at 70°C); Q2: 9.7A at 25°C (7.8A at 70°C) with VGS=10V.
Q1: 18.1 mΩ typical at VGS=10V; Q2: 11.5 mΩ typical at VGS=10V.
Q1: 4.6 nC typical; Q2: 6.5 nC typical at VDS=15V, VGS=4.5V.