| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7862TRPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for applications requiring efficient power switching with a maximum drain-to-source voltage of 30V and a continuous drain current of 21A at 25°C. The device offers a low typical on-resistance of 3.0 mOhm at 10V gate drive, with a maximum of 3.3 mOhm, enabling high efficiency in power conversion circuits.
This MOSFET is characterized for switching performance with a typical total gate charge of 30 nC and fast switching times, including a 16 ns turn-on delay and 11 ns fall time. It is fully characterized for avalanche energy and current, and features a maximum gate-source voltage rating of ±20V. The device is lead-free and RoHS compliant.
The IRF7862TRPBF is housed in a standard 8-SOIC surface mount package, making it suitable for automated assembly processes. It is commonly used in synchronous rectification for isolated DC-DC converters and as a synchronous MOSFET for notebook processor power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
| 10+ | $1.20 | $1.20 |
| 50+ | $0.90 | $0.90 |
| 100+ | $0.80 | $0.80 |
| 500+ | $0.63 | $0.63 |
| 4,000+ | $0.49 | $0.49 |
| 12,000+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30 V.
The continuous drain current is 21 A at 25°C with Vgs at 10V.
The maximum on-resistance is 3.3 mOhm at Vgs=10V and Id=20A. At Vgs=4.5V and Id=16A, the maximum is 4.5 mOhm.
The operating junction temperature range is -55°C to 150°C.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
Yes, it is listed as RoHS3 compliant and is lead-free.
The typical total gate charge is 30 nC at Vds=15V, Id=16A, and Vgs=4.5V.