| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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59 pcs
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59 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay IRF7855PBF is a high-performance N-channel Power MOSFET designed for various DC-DC converter topologies, including bridge and push-pull configurations. It is suitable for primary side switching and secondary side synchronous rectification in isolated DC-DC converters, as well as non-isolated synchronous buck applications.
Key electrical characteristics include a Drain-to-Source Breakdown Voltage of 60V and a maximum Static Drain-to-Source On-Resistance of 9.4mΩ at 25°C. The MOSFET features low gate charge to reduce switching losses and fully characterized capacitance for design simplification. Dynamic parameters such as total gate charge (Qg), gate-to-source charge (Qgs), and gate-to-drain charge (Qgd) are specified, along with switching times like turn-on delay, rise time, turn-off delay, and fall time.
Packaged in a standard SO-8 surface-mount package, the IRF7855PBF is designed for efficient thermal management, with a Junction-to-Ambient thermal resistance of 50°C/W. Its operating junction and storage temperature range is -55°C to +150°C. The device is suitable for applications requiring robust performance and simplified design in power conversion systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-to-Source Voltage for the IRF7855PBF is 60V.
The typical Static Drain-to-Source On-Resistance is 7.4mΩ at 25°C.
The maximum Static Drain-to-Source On-Resistance is 9.4mΩ at 25°C.
The Gate Threshold Voltage ranges from a minimum of 3V to a maximum of 4.9V.
The typical Total Gate Charge is 26nC.
The IRF7855PBF is supplied in an SO-8 package.
The maximum continuous drain current at 25°C is 12A.