| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,069 pcs
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2069 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Infineon IRF7854PBF is a HEXFET Power MOSFET suitable for primary side switching in bridge or two-switch forward topologies using 48V (±10%) or 36V to 60V ETSI range inputs. It is also applicable as a secondary side synchronous rectification switch for 12V output and for 48V non-isolated synchronous buck DC-DC applications.
Key electrical characteristics include a 80V drain-to-source breakdown voltage and a maximum continuous drain current of 10A at 25°C with a 10V gate-to-source voltage. The static drain-to-source on-resistance is typically 11mΩ, with a maximum of 13.4mΩ at 25°C. The device features low gate-to-drain charge to reduce switching losses and fully characterized capacitance including effective Coss to simplify design.
This MOSFET is housed in a SO-8 package and is designed for surface mount applications. It operates within a junction and storage temperature range of -55°C to +150°C. The thermal resistance from junction-to-drain lead is a maximum of 20°C/W, and junction-to-ambient (PCB mount) is a maximum of 50°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 80V.
The maximum continuous drain current at 25°C with VGS = 10V is 10A.
The typical static drain-to-source on-resistance is 11mΩ.
The operating junction and storage temperature range is -55°C to +150°C.
The IRF7854PBF is available in the SO-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.