| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,069 pcs
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2069 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7854PBF is an N-Channel enhancement-mode MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power conversion in switch-mode power supplies.
Key electrical specifications: maximum drain-source voltage 80V, continuous drain current 10A at 25°C (7.9A at 70°C), pulsed drain current up to 79A. The static drain-to-source on-resistance is typically 11mΩ with a maximum of 13.4mΩ at VGS=10V, ID=10A. Gate threshold voltage ranges from 3.0V to 4.9V. The device features low gate charge (typical 27nC, max 41nC) and fully characterized capacitances for simplified switching loss calculations.
The MOSFET is housed in a surface-mount 8-SOIC package (0.154", 3.90mm width) with a supplier device package of 8-SO. It is suitable for applications such as primary side switches in 48V bridge or two-switch forward topologies, secondary side synchronous rectification for 12V output, and 48V non-isolated synchronous buck converters.
80V maximum.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C junction temperature.
RoHS3 compliant, but this is unverified (low confidence).
Typical 11mΩ, maximum 13.4mΩ at VGS=10V, ID=10A.
Minimum 3.0V, maximum 4.9V at VDS=VGS, ID=100µA.
Typical 27nC, maximum 41nC at VDS=40V, VGS=10V, ID=6A.