| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,145 pcs
|
1145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7853TRPBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies. It features a drain-source voltage rating of 100V and a continuous drain current of 8.3A at 25°C ambient temperature, making it suitable for a variety of DC-DC converter applications. The device offers a low maximum on-resistance of 18mΩ at a gate-source voltage of 10V, contributing to high efficiency in switching circuits.
This MOSFET is designed with a low gate-to-drain charge to reduce switching losses, and its capacitance characteristics are fully characterized to simplify design. The part is housed in an industry-standard 8-SOIC package and supports surface mount assembly. It is rated for operation over a junction temperature range of -55°C to 150°C.
Typical applications include primary side switches in bridge topologies for universal input isolated DC-DC converters, primary side switches in push-pull topology for 18-36Vin converters, secondary side synchronous rectification switches, and non-isolated synchronous buck converters. The device is also characterized for avalanche voltage and current.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.31 | $2.31 |
| 10+ | $1.48 | $1.48 |
| 50+ | $1.12 | $1.12 |
| 100+ | $1.00 | $1.00 |
| 500+ | $0.80 | $0.80 |
| 4,000+ | $0.63 | $0.63 |
| 12,000+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
8.3A at 25°C ambient temperature, and 6.6A at 70°C ambient temperature.
Maximum 18mΩ at Vgs=10V and Id=8.3A, typical 14.4mΩ under same conditions.
-55°C to 150°C.
8-SOIC (0.154", 3.90mm Width) surface mount package.
Yes, it is RoHS3 Compliant and lead-free (PbF).
Typical total gate charge is 28nC, maximum 39nC at Vds=50V, Id=5A, Vgs=10V.