| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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74 pcs
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74 pcs | On Request | 1 | On Request | On Request | 1108 | On Request | On Request |
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The IRF7853PBF is a HEXFET power MOSFET from Infineon Technologies, designed for efficient power switching in DC-DC converters and other applications. It features an N-Channel enhancement mode with a maximum drain-to-source voltage of 100V and continuous drain current of 8.3A at 25°C. The device exhibits a low on-resistance of 18mOhm at 10V gate drive, minimizing conduction losses. Key switching characteristics include a typical gate charge of 39nC and input capacitance of 1640pF, enabling fast switching with reduced losses. The MOSFET is housed in a standard 8-SOIC (SO-8) surface-mount package, suitable for automated assembly. Typical applications include primary side switches in bridge topology for isolated DC-DC converters, secondary side synchronous rectification for 15V outputs, and 48V non-isolated synchronous buck converters.
100V.
8.3A at 25°C ambient with 10V gate drive.
8-SOIC (0.154", 3.90mm Width) surface-mount package.
-55°C to 150°C (junction temperature).
Marked as RoHS3 Compliant, but this is unverified (low confidence).
18mOhm maximum at 8.3A drain current and 10V gate drive.
Primary side switch in bridge topology, secondary side synchronous rectification, and 48V non-isolated synchronous buck converters.