IRF7842TRPBF The Infineon Technologies IRF7842TRPBF is an N-channel MOSFET with a 40V drain-to-source breakdown voltage and a low on-resistance of 5.0mΩ maximum. It is supplied in an SO-8 package.
Mfr Part #:

IRF7842TRPBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Infineon Technologies IRF7842TRPBF is an N-channel MOSFET with a 40V drain-to-source breakdown voltage and a low on-resistance of 5.0mΩ maximum. It is supplied in an SO-8 package.
✓ Total Stock: 3,246 pcs
$ Price Range: $2.15

IRF7842TRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,821 pcs
2821 pcs On Request 1 On Request On Request 17+ On Request On Request
Non-Authorised Inventory information
425 pcs
425 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7842TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRF7842TRPBF Description

Short technical summary and product information.

The Infineon Technologies IRF7842TRPBF is an N-channel HEXFET Power MOSFET designed for applications requiring high efficiency and low on-resistance. It features a drain-to-source breakdown voltage of 40V and a maximum static drain-to-source on-resistance of 5.0mΩ at VGS = 10V. The typical gate charge is 33nC.

 

This MOSFET is characterized by its very low RDS(on) at 4.5V VGS and low gate charge, making it suitable for synchronous rectification and DC-DC converter applications, particularly in notebook processors. It is fully characterized for avalanche voltage and current.

 

The IRF7842TRPBF comes in a standard SO-8 package. The continuous drain current is rated at 18A at 25°C ambient temperature and 14A at 70°C ambient temperature, with a pulsed drain current capability of 140A.

 

Key electrical parameters include a gate threshold voltage typically around 1.35V and a forward transconductance of 81S. The operating junction and storage temperature range is from -55°C to +150°C.

IRF7842TRPBF Quick Information

Product Type: N-channel MOSFET
Canonical Name: IRF7842TRPBF N-channel HEXFET Power MOSFET
Subcategory: N-channel

IRF7842TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF7842TRPBF Estimated Pricing

Qty Low High
1+ $2.15 $2.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7842TRPBF Features

  • 40V drain-to-source breakdown voltage.
  • 5.0mΩ maximum static on-resistance.
  • 33nC typical gate charge.
  • Suitable for synchronous rectification.
  • SO-8 package for compact designs.

IRF7842TRPBF Applications

  • Synchronous MOSFET for notebook processors.
  • Secondary synchronous rectification for DC-DC converters.
  • Synchronous FET for non-isolated DC-DC converters.

IRF7842TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source breakdown voltage?

The maximum drain-to-source breakdown voltage is 40V.

What is the maximum static drain-to-source on-resistance?

The maximum static drain-to-source on-resistance is 5.0mΩ at VGS = 10V.

What is the typical gate charge?

The typical gate charge is 33nC.

What package type is the IRF7842TRPBF supplied in?

The IRF7842TRPBF is supplied in an SO-8 package.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the REACH status?

The REACH status is REACH Unaffected.

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