| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,821 pcs
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2821 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
425 pcs
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425 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The Infineon Technologies IRF7842TRPBF is an N-channel HEXFET Power MOSFET designed for applications requiring high efficiency and low on-resistance. It features a drain-to-source breakdown voltage of 40V and a maximum static drain-to-source on-resistance of 5.0mΩ at VGS = 10V. The typical gate charge is 33nC.
This MOSFET is characterized by its very low RDS(on) at 4.5V VGS and low gate charge, making it suitable for synchronous rectification and DC-DC converter applications, particularly in notebook processors. It is fully characterized for avalanche voltage and current.
The IRF7842TRPBF comes in a standard SO-8 package. The continuous drain current is rated at 18A at 25°C ambient temperature and 14A at 70°C ambient temperature, with a pulsed drain current capability of 140A.
Key electrical parameters include a gate threshold voltage typically around 1.35V and a forward transconductance of 81S. The operating junction and storage temperature range is from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.15 | $2.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source breakdown voltage is 40V.
The maximum static drain-to-source on-resistance is 5.0mΩ at VGS = 10V.
The typical gate charge is 33nC.
The IRF7842TRPBF is supplied in an SO-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.