| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,020 pcs
|
9020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,142 pcs
|
4142 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,424 pcs
|
1424 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Lead Style | |
| Tape & Reel |
The Infineon IRF7842TRPBF is a HEXFET N-channel Power MOSFET. It is characterized by a low RDS(on) of 5mΩ maximum at VGS = 10V and a low gate charge of 33nC typical. This MOSFET is suitable for synchronous rectification in isolated and non-isolated DC-DC converters, as well as synchronous MOSFET applications for notebook processor power.
The device has a Drain-to-Source Breakdown Voltage (BVDSS) of 40V and a continuous drain current of 18A at 25°C. The operating junction and storage temperature range is -55°C to +150°C. The IRF7842TRPBF comes in a lead-free SO-8 package, suitable for tape and reel packaging.
Key electrical parameters include a gate threshold voltage (VGS(th)) between 1.35V and 2.25V, and a forward transconductance (gfs) of 81S typical. The thermal resistance junction-to-ambient (RθJA) is 50°C/W maximum.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.15 | $2.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 18A at 25°C and 14A at 70°C.
The typical gate charge is 33nC at VGS = 10V.
The IRF7842TRPBF is supplied in an SO-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.