IRF7842TR N-Channel MOSFET, 40V drain-source voltage, 18A continuous drain current, surface mount 8-SOIC package.
Mfr Part #:

IRF7842TR

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 40V drain-source voltage, 18A continuous drain current, surface mount 8-SOIC package.
✓ Total Stock: 4,000 pcs
$ Price Range: $1.61

IRF7842TR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7842TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7842TR Description

Short technical summary and product information.

The IRF7842TR is an N-Channel power MOSFET manufactured by Infineon Technologies, using advanced MOSFET (Metal Oxide) technology. It features a drain-to-source voltage (Vdss) of 40V and a continuous drain current of 18A at 25°C (14A at 70°C). The device offers a very low on-resistance of 5mΩ maximum at 10V gate drive (4.0mΩ typical), and 5.9mΩ maximum at 4.5V gate drive (4.7mΩ typical). Gate charge is 33nC typical (50nC maximum), and input capacitance is 4500pF maximum at 20V drain-source voltage.

 

The MOSFET is designed for synchronous rectification applications, including synchronous MOSFET for notebook processor power, secondary synchronous rectification for isolated DC-DC converters, and synchronous FET for non-isolated DC-DC converters. It is fully characterized for avalanche voltage and current.

 

The device is housed in an 8-SOIC (0.154", 3.90mm Width) surface mount package with a supplier device package of 8-SO. It is available in two packaging forms: tube/bulk (standard pack quantity 95) and tape and reel (standard pack quantity 4000). The operating junction temperature range is -55°C to 150°C. Maximum power dissipation is 2.5W at 25°C ambient. The part is lead-free, indicated by the PbF suffix in the part number (IRF7842PbF).

IRF7842TR Quick Information

Product Type: Single MOSFET
Canonical Name: IRF7842TR N-Channel MOSFET, 40V, 18A, 8-SOIC
Subcategory: N-Channel MOSFET

IRF7842TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free (PbF suffix in part number)

IRF7842TR Estimated Pricing

Qty Low High
4,000+ $1.61 $1.61

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7842TR Features

  • Low on-resistance of 5mΩ at 10V.
  • Gate charge of 33nC typical.
  • Continuous drain current of 18A.
  • Surface mount 8-SOIC package.
  • Lead-free (PbF) plating.

IRF7842TR Applications

  • Synchronous MOSFET for notebook processor power.
  • Secondary synchronous rectification for isolated DC-DC converters.
  • Synchronous FET for non-isolated DC-DC converters.

IRF7842TR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF7842TR?

The drain-to-source voltage (Vdss) is 40V.

What package is the IRF7842TR available in?

It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range of the IRF7842TR?

The operating junction temperature range is -55°C to 150°C.

Is the IRF7842TR RoHS compliant?

The RoHS status is marked as RoHS3 Compliant, but this is unverified. The datasheet confirms the part is lead-free (PbF).

What is the maximum continuous drain current at 25°C?

The continuous drain current at 25°C is 18A with Vgs=10V.

What is the typical gate charge of the IRF7842TR?

The typical gate charge is 33nC, with a maximum of 50nC at Vgs=4.5V.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 5mΩ at Id=17A, Vgs=10V, with a typical value of 4.0mΩ.

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