| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7834PBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It features a drain-source voltage rating of 30V and a continuous drain current of 19A at 25°C. The device offers very low on-resistance: typically 3.6 mOhm at 10V gate drive and 4.4 mOhm at 4.5V, with maximum values of 4.5 mOhm and 5.5 mOhm respectively. Gate threshold voltage ranges from 1.35V to 2.25V, making it compatible with low-voltage logic.
This MOSFET is optimized for synchronous rectification in isolated DC-DC converters and notebook processor power supplies. It features a total gate charge of 29 nC typical and input capacitance of 3710 pF, enabling fast switching with low gate drive losses. Switching times are characterized with turn-on delay of 13.7 ns, rise time of 14.3 ns, turn-off delay of 18 ns, and fall time of 5 ns. The device is rated for single pulse avalanche energy of 25 mJ.
The IRF7834PBF is housed in a standard 8-SOIC surface mount package (0.154", 3.90mm width) with a junction-to-ambient thermal resistance of 50°C/W. It operates over a junction temperature range of -55°C to 150°C. The part is RoHS3 compliant and lead-free, suitable for environmentally conscious designs.
30V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction).
Yes, RoHS3 compliant and lead-free.
3.6 mOhm typical, 4.5 mOhm maximum.
1.35V to 2.25V.
29 nC typical, 44 nC maximum.