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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRF7832ZPBF is an N-Channel MOSFET suitable for surface mount applications. This component features a breakdown voltage of 30V (D-S) and a maximum continuous drain current of 20A. Its low on-resistance is rated at a maximum of 4mΩ, with a typical threshold voltage of 2.32V.
Designed for efficient operation, the IRF7832ZPBF has typical rise and fall times of 6.7ns and 13ns, respectively, with an input capacitance of 4.31nF. The maximum power dissipation is 2.5W, and it operates within a temperature range of -55°C to 155°C. The MOSFET is housed in a SOIC package.
This device is manufactured by Vishay Dale and is part of the single N-Channel MOSFET category. Its specifications make it suitable for power switching and amplification circuits where efficient current handling and low on-state resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 30V.
The package is SOIC (surface mount).
The operating temperature range is -55°C to 155°C.
The maximum drain-source on-resistance is 4mΩ.
The maximum continuous drain current is 20A.
The typical gate threshold voltage is 2.32V.
The maximum power dissipation is 2.5W.
