| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,020 pcs
|
21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
175 pcs
|
175 pcs | On Request | 1 | On Request | On Request | 1045 | On Request | On Request | |
|
54 pcs
|
54 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Rise Time (Typ) | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7832TRPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power conversion applications, offering a drain-to-source voltage of 30V and a continuous drain current of 20A at 25°C. The device features an ultra-low maximum on-resistance of 4mOhm at VGS=10V and ID=20A, with a typical value of 3.1mOhm.
This MOSFET is optimized for low gate charge (34nC typical at 4.5V) and low gate impedance, enabling fast switching performance. It is fully characterized for avalanche operation and has a maximum gate-source voltage rating of ±20V. The device is housed in a standard 8-SOIC surface-mount package (8-SO supplier package), making it suitable for compact PCB designs.
Key electrical characteristics include a typical gate threshold voltage of 1.39V, input capacitance of 4310pF, and fast switching times with typical turn-on delay of 12ns and rise time of 6.7ns. The operating junction temperature range is -55°C to 155°C, with a maximum power dissipation of 2.5W at 25°C ambient.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.81 | $1.81 |
| 10+ | $1.15 | $1.15 |
| 50+ | $0.86 | $0.86 |
| 100+ | $0.77 | $0.77 |
| 500+ | $0.61 | $0.61 |
| 4,000+ | $0.47 | $0.47 |
| 12,000+ | $0.43 | $0.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The maximum continuous drain current is 20A at TA=25°C with VGS=10V.
The maximum on-resistance is 4mOhm at VGS=10V and ID=20A, and 4.8mOhm at VGS=4.5V and ID=16A.
The operating junction temperature range is -55°C to 155°C.
It comes in an 8-SOIC surface-mount package (0.154", 3.90mm Width) with a supplier device package of 8-SO.
The maximum gate threshold voltage is 2.32V at ID=250µA, with a typical value of 1.39V.
The typical total gate charge is 34nC at VDS=15V, VGS=4.5V, and ID=16A.