| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,362 pcs
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3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,132 pcs
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1132 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7832PBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power conversion applications, particularly synchronous rectification in DC-DC converters and notebook processor power supplies.
Key electrical specifications include a drain-to-source voltage (Vds) of 30V, a continuous drain current (Id) of 20A at 25°C (16A at 70°C), and a pulsed drain current capability of 160A. The device achieves a low on-resistance of 4.0 mΩ maximum at Vgs=10V and 4.8 mΩ at Vgs=4.5V, enabling high efficiency in low-voltage switching applications.
The MOSFET is characterized by a gate threshold voltage range of 1.39V to 2.32V, a typical gate charge of 34 nC at Vgs=4.5V, and low gate impedance. It is housed in a standard 8-SOIC surface-mount package (8-SO), making it suitable for compact PCB layouts. The operating junction temperature range is -55°C to +155°C.
The drain-to-source voltage (Vds) is 30 V.
The maximum continuous drain current is 20 A at 25°C (Vgs=10V) and 16 A at 70°C (Vgs=10V).
The maximum on-resistance is 4.0 mΩ at Vgs=10V, Id=20A, and 4.8 mΩ at Vgs=4.5V, Id=16A.
The operating junction temperature range is -55°C to +155°C.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also known as 8-SO.
The part is marked as RoHS3 Compliant, though this is unverified.