| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,984 pcs
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2984 pcs | On Request | 1 | On Request | On Request | 1133 | On Request | On Request |
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The IRF7822TRPBF is an N-Channel enhancement mode MOSFET from Infineon Technologies, designed for high-efficiency DC-DC converter applications. It employs advanced HEXFET power MOSFET technology to achieve an optimal balance of on-resistance and gate charge, reducing both conduction and switching losses.
Key electrical specifications include a maximum drain-source voltage (Vds) of 30V, continuous drain current (Id) of 18A at 25°C (13A at 70°C), and pulsed drain current capability up to 150A. The typical drain-source on-resistance (Rds(on)) is 5.0mOhm at Vgs=4.5V and Id=15A, with a maximum of 6.5mOhm. Total gate charge (Qg) is typically 44nC at Vgs=5V. The device is housed in a standard 8-SOIC (SO-8) surface-mount package, making it suitable for automated assembly processes.
This MOSFET is optimized for synchronous buck converter topologies, particularly for powering microprocessors and other low-voltage, high-current loads. The package design supports vapor phase, infrared, convection, or wave soldering, and power dissipation of over 3W is achievable with proper PCB mounting. The device is lead-free (PbF) compliant.
The maximum drain-source voltage is 30 V.
At 25°C, the maximum continuous drain current is 18 A; at 70°C, it is 13 A.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also referred to as 8-SO.
The typical on-resistance is 5.0 mOhm at Vgs=4.5V and Id=15A; the maximum is 6.5 mOhm.
The typical total gate charge is 44 nC at Vgs=5V, Id=15A, Vds=16V; the maximum is 60 nC.
The part is listed as RoHS3 Compliant in the database, but this is unverified. The datasheet confirms it is lead-free (PbF).