IRF7821PBF The Infineon IRF7821PBF is a HEXFET power N-Channel MOSFET designed for high-efficiency power conversion. It features a 30V drain-source voltage, 13.6A continuous drain current, and low 9.1mΩ on-resistance.
Mfr Part #:

IRF7821PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon IRF7821PBF is a HEXFET power N-Channel MOSFET designed for high-efficiency power conversion. It features a 30V drain-source voltage, 13.6A continuous drain current, and low 9.1mΩ on-resistance.
✓ Total Stock: 490 pcs
$ Price Range: $0.37

IRF7821PBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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490 pcs
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IRF7821PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7821PBF Description

Short technical summary and product information.

The Infineon IRF7821PBF is a HEXFET power N-Channel MOSFET in a surface-mount SO-8 package. It is rated for a maximum drain-source voltage of 30V and continuous drain current of 13.6A at 25°C ambient. The device features a low maximum on-resistance of 9.1mΩ at VGS=10V and ID=13A, and 12.5mΩ at VGS=4.5V and ID=10A, enabling high efficiency in power conversion applications.

 

Electrical characteristics include a typical total gate charge of 9.3nC at VDS=15V and VGS=4.5V, and typical input capacitance of 1010pF. Switching speeds are optimized with typical turn-on delay of 6.3ns and turn-off delay of 9.7ns. The device is fully avalanche-rated with a maximum single-pulse avalanche energy of 44mJ.

 

The MOSFET operates over a junction temperature range of -55°C to 155°C and has a maximum power dissipation of 2.5W at 25°C. The SO-8 package (8-SOIC) provides a compact footprint for space-constrained designs. The part is lead-free as indicated by the PbF suffix in the part number.

IRF7821PBF Quick Information

Product Type: N-Channel MOSFET
Series: HEXFET
Canonical Name: IRF7821PBF N-Channel MOSFET
Subcategory: Single N-Channel

IRF7821PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF7821PBF Estimated Pricing

Qty Low High
3,800+ $0.37 $0.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7821PBF Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 13.6A continuous drain current at 25°C.
  • Low on-resistance of 9.1mΩ at 10V gate drive.
  • Fast switching with 14nC total gate charge.
  • Lead-free and SO-8 surface mount package.

IRF7821PBF Applications

  • High frequency point-of-load synchronous buck converters.
  • Networking and computing systems power management.
  • DC-DC conversion in telecom and data communication.
  • Load switching and power distribution.

IRF7821PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V maximum.

What is the continuous drain current?

13.6A at 25°C ambient with VGS=10V; 11A at 70°C ambient.

What is the on-resistance?

9.1mOhm maximum at VGS=10V and ID=13A; 12.5mOhm maximum at VGS=4.5V and ID=10A.

What is the operating temperature range?

Junction temperature range -55°C to 155°C.

What package is the IRF7821PBF available in?

8-SOIC (0.154", 3.90mm Width), supplier device package 8-SO.

Is this part lead-free?

Yes, the part number includes 'PbF' suffix and the datasheet states it is lead-free.

What is the gate threshold voltage?

Minimum and maximum 1.0V at VDS=VGS and ID=250µA.

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