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IRF7820TRPBF N-Channel MOSFET, 200V drain-source voltage, 3.7A continuous drain current, 78mΩ on-resistance at 10V gate drive. Surface mount 8-SOIC package.
Mfr Part #:

IRF7820TRPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 200V drain-source voltage, 3.7A continuous drain current, 78mΩ on-resistance at 10V gate drive. Surface mount 8-SOIC package.
✓ Total Stock: 6,620 pcs
$ Price Range: $0.62 - $2.42

IRF7820TRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,020 pcs
On Request
5020 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,600 pcs
On Request
1600 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF7820TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF7820TRPBF Description

Short technical summary and product information.

The IRF7820TRPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a maximum drain-source voltage of 200V and a continuous drain current of 3.7A at 25°C ambient temperature. The device offers a typical on-resistance of 62.5mΩ and a maximum of 78mΩ at Vgs=10V and Id=2.2A. Gate charge is typically 29nC, enabling efficient switching. The MOSFET is designed for applications such as synchronous rectification in isolated DC-DC converters and notebook processor power. It is housed in a surface-mount 8-SOIC package with gull wing leads, suitable for automated assembly. The operating junction temperature range is -55°C to 150°C. The device is RoHS compliant and has an MSL rating of 1 (unlimited).

IRF7820TRPBF Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IRF7820TRPBF N-Channel MOSFET, 200V, 3.7A, 8-SOIC
Subcategory: N-Channel MOSFET

IRF7820TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IRF7820TRPBF Estimated Pricing

Qty Low High
1+ $2.42 $2.42
10+ $1.55 $1.55
50+ $1.18 $1.18
100+ $1.06 $1.06
500+ $0.84 $0.84
4,000+ $0.67 $0.67
12,000+ $0.62 $0.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7820TRPBF Features

  • 200V drain-source voltage rating.
  • 3.7A continuous drain current at 25°C.
  • Low on-resistance: 62.5mΩ typical.
  • Low gate charge: 29nC typical.
  • Surface mount 8-SOIC package.

IRF7820TRPBF Applications

  • Synchronous MOSFET for notebook processor power.
  • Synchronous rectifier for isolated DC-DC converters.
  • High-frequency switching power supplies.

IRF7820TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF7820TRPBF?

200V.

What package does the IRF7820TRPBF come in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating junction temperature range?

-55°C to 150°C.

Is the IRF7820TRPBF RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the typical on-resistance?

62.5mΩ at Vgs=10V, Id=2.2A.

What is the gate charge?

29nC typical at Vds=100V, Vgs=10V, Id=2.2A.

What is the continuous drain current at 25°C?

3.7A.

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