| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,738 pcs
|
1738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7815TRPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for applications requiring high efficiency and low gate charge. With a drain-source voltage rating of 150V and continuous drain current of 5.1A at 25°C, it is suitable for synchronous rectification in DC-DC converters and notebook processor power supplies. The device features a maximum on-resistance of 43mOhm at VGS=10V and ID=3.1A, and a typical gate charge of 25nC. It is housed in an 8-SOIC package with surface mount mounting, operating over a junction temperature range of -55°C to 150°C. The MOSFET is RoHS compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.37 | $2.37 |
| 10+ | $1.52 | $1.52 |
| 50+ | $1.15 | $1.15 |
| 100+ | $1.03 | $1.03 |
| 500+ | $0.82 | $0.82 |
| 4,000+ | $0.65 | $0.65 |
| 12,000+ | $0.60 | $0.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
5.1A continuous at 25°C, 4.1A at 70°C, 41A pulsed.
Maximum 5V at ID=100µA.
43mOhm maximum at VGS=10V, ID=3.1A.