| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7815PBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power conversion applications including synchronous rectification in DC-DC converters.
Key electrical specifications include a drain-to-source voltage (Vdss) of 150V, continuous drain current of 5.1A at 25°C, and a maximum on-resistance of 43 mOhm at Vgs = 10V. The device features a typical gate charge of 25 nC and low gate-to-drain charge (Qgd) of 7.4 nC, enabling fast switching performance.
The MOSFET is housed in a surface-mount 8-SOIC package (0.154", 3.90mm width) with a supplier device package designation of 8-SO. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at 25°C ambient.
The drain-to-source breakdown voltage (Vdss) is 150V.
The maximum continuous drain current is 5.1A at 25°C ambient temperature with Vgs = 10V.
The maximum on-resistance (Rds(on)) is 43 mOhm at Vgs = 10V and Id = 3.1A. Typical on-resistance is 34 mOhm.
The IRF7815PBF is available in an 8-SOIC surface-mount package (0.154", 3.90mm width).
The operating junction temperature range is -55°C to 150°C.
The IRF7815PBF is listed as RoHS3 compliant, though this information is unverified.
The gate threshold voltage (Vgs(th)) ranges from 3.0V minimum to 5.0V maximum, with a typical value of 4.0V at Id = 100µA.