| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7811WTR is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, designed for DC-DC converter applications. It features a maximum drain-to-source voltage of 30V and a continuous drain current of 14A at 25°C ambient temperature. The device achieves a typical on-resistance of 9mΩ at a gate drive voltage of 4.5V, minimizing conduction losses.
Optimized for synchronous buck converters, the IRF7811WTR offers low gate charge (22nC typical) and fast switching characteristics. The maximum power dissipation is 3.1W at 25°C ambient. The MOSFET is housed in a standard 8-SOIC package (0.154" width) and is intended for surface-mount assembly.
Typical applications include CPU core voltage regulation, high-efficiency DC-DC converters, and other power management circuits.
30V.
14A at 25°C ambient temperature.
8-SOIC (0.154", 3.90mm Width) surface-mount package.
-55°C to 150°C junction temperature.