DistyParts Icon
IRF7811APBF N-Channel MOSFET with 28V drain-source breakdown voltage and 11A continuous drain current. Features low on-resistance of 10mOhm at 10V gate drive.
Mfr Part #:

IRF7811APBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 28V drain-source breakdown voltage and 11A continuous drain current. Features low on-resistance of 10mOhm at 10V gate drive.
✓ Total Stock: 3,200 pcs

IRF7811APBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,200 pcs
On Request
3200 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF7811APBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Fall Time (Typ)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Rise Time (Typ)
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

IRF7811APBF Description

Short technical summary and product information.

The IRF7811APBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power conversion applications. It features a drain-source voltage rating of 28V and a continuous drain current of 11A at 25°C. The device offers a low maximum on-resistance of 10mOhm at VGS=10V, with a typical value of 8.7mOhm at VGS=4.5V. This MOSFET is optimized for low gate charge (typical 17nC at 4.5V) and fast switching, with typical turn-on delay of 7.5ns and rise time of 4.1ns. It is suitable for synchronous buck converters and isolated DC-DC converters. The device is housed in an 8-SOIC surface-mount package and supports an operating junction temperature range of -55°C to 150°C.

IRF7811APBF Quick Information

Product Type: Single MOSFET
Series: HEXFET
Canonical Name: IRF7811APBF N-Channel MOSFET
Subcategory: Power MOSFET

IRF7811APBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRF7811APBF Features

  • Low on-resistance of 10mOhm at 10V gate drive.
  • Fast switching with 7.5ns turn-on delay.
  • Surface mount 8-SOIC package.
  • RoHS compliant and lead-free.
  • Rated for 28V drain-source voltage.

IRF7811APBF Applications

  • Used in synchronous buck converters for processor power.
  • Ideal for isolated DC-DC converters with synchronous rectification.
  • Suitable for high-frequency power switching applications.

IRF7811APBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF7811APBF?

The drain-source breakdown voltage is 28V.

What is the continuous drain current rating?

11A at 25°C and 9.1A at 70°C with VGS=10V.

What is the on-resistance of the IRF7811APBF?

Maximum 10mOhm at VGS=10V and ID=11A; typical 8.7mOhm at VGS=4.5V and ID=9A.

What is the gate threshold voltage?

Minimum 1.0V, maximum 3.0V at ID=250µA.

What is the operating temperature range?

Junction temperature range from -55°C to 150°C.

What package is the IRF7811APBF available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

Is the IRF7811APBF RoHS compliant?

Yes, it is marked as RoHS3 compliant, but this is unverified.

Home
Account

Categories