IRF7809AVTRPBF N-Channel MOSFET from Infineon Technologies with 30V drain-source voltage and 13.3A continuous drain current. Features low on-resistance of 9mOhm and is housed in an 8-SOIC surface-mount package.
Mfr Part #:

IRF7809AVTRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 30V drain-source voltage and 13.3A continuous drain current. Features low on-resistance of 9mOhm and is housed in an 8-SOIC surface-mount package.
✓ Total Stock: 4,000 pcs
$ Price Range: $1.81

IRF7809AVTRPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 1718+ On Request On Request

IRF7809AVTRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7809AVTRPBF Description

Short technical summary and product information.

The IRF7809AVTRPBF is an N-Channel MOSFET from Infineon Technologies, part of the HEXFET power MOSFET family. It is designed for high-efficiency DC-DC converter applications, particularly CPU core voltage regulators.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 30V, a continuous drain current of 13.3A at 25°C, and a maximum drain-source on-resistance of 9mOhm at Vgs = 4.5V. The device features a typical total gate charge of 41nC and typical input capacitance of 3780pF, contributing to low switching losses.

 

The MOSFET is housed in a standard 8-SOIC surface-mount package (8-SO supplier package) and is rated for operation over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at 25°C ambient temperature. The device is lead-free and designed for surface mount soldering processes.

IRF7809AVTRPBF Quick Information

Product Type: MOSFET
Series: IRF7809AV
Canonical Name: IRF7809AVTRPBF N-Channel MOSFET
Subcategory: Single MOSFET

IRF7809AVTRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF7809AVTRPBF Estimated Pricing

Qty Low High
1+ $1.81 $1.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7809AVTRPBF Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current rated at 13.3A.
  • Low on-resistance of 9mOhm maximum.
  • Surface-mount 8-SOIC package.
  • Lead-free and RoHS compliant.

IRF7809AVTRPBF Applications

  • Ideal for CPU core DC-DC converters.
  • Used in high-efficiency synchronous buck converters.
  • Suitable for power management in computing systems.
  • Applicable in low-voltage high-current power supplies.

IRF7809AVTRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF7809AVTRPBF?

The drain-to-source voltage (Vdss) is 30V.

What is the maximum continuous drain current?

The continuous drain current is 13.3A at Ta = 25°C.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance is 9mOhm at Id = 15A and Vgs = 4.5V.

What package is the IRF7809AVTRPBF available in?

It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRF7809AVTRPBF RoHS compliant?

The datasheet states the device is Lead-Free, and the existing database indicates RoHS3 compliance, though this is unverified.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 1V at Id = 250µA.

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