IRF7809A IRF7809A is a 30V, 14.5A N-Channel MOSFET in an 8-SOIC package. It features an 8.5mOhm maximum on-resistance at 4.5V gate drive.
Mfr Part #:

IRF7809A

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF7809A is a 30V, 14.5A N-Channel MOSFET in an 8-SOIC package. It features an 8.5mOhm maximum on-resistance at 4.5V gate drive.
✓ Total Stock: 4,000 pcs
$ Price Range: $2.02

IRF7809A Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7809A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature Range
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7809A Description

Short technical summary and product information.

The IRF7809A is an N-Channel power MOSFET from Infineon Technologies, part of their HEXFET family optimized for DC-DC converter applications. It is designed for synchronous buck converters used in CPU core power stages.

 

Key electrical characteristics include a 30V drain-source breakdown voltage, 14.5A continuous drain current at 25°C, and a maximum on-resistance of 8.5mOhm at Vgs=4.5V and Id=15A. Total gate charge is 75nC at Vgs=5V, and input capacitance is 7300pF at Vds=16V. The device can handle pulsed drain currents up to 100A and has a power dissipation of 2.5W.

 

The MOSFET is housed in an 8-SOIC (SO-8) surface mount package with a junction-to-ambient thermal resistance of 50°C/W. It is rated for operation from -55°C to 150°C. The part supports 4.5V gate drive logic levels and offers low conduction and switching losses.

IRF7809A Quick Information

Product Type: Single N-Channel MOSFET
Series: IRF7809A
Canonical Name: IRF7809A N-Channel MOSFET
Subcategory: Single N-Channel

IRF7809A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF7809A Estimated Pricing

Qty Low High
95+ $2.02 $2.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7809A Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 14.5A continuous drain current at 25°C.
  • 8.5mOhm max on-resistance at 4.5V gate drive.
  • 75nC total gate charge at 5V gate drive.
  • Surface mount 8-SOIC package.

IRF7809A Applications

  • Synchronous buck DC-DC converters.
  • CPU core voltage regulation.
  • High-efficiency power conversion stages.
  • Low-voltage power management circuits.

IRF7809A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF7809A?

The maximum drain-source voltage (Vdss) is 30V.

What is the maximum continuous drain current of the IRF7809A?

The maximum continuous drain current is 14.5A at 25°C ambient temperature.

What is the on-resistance of the IRF7809A?

The maximum on-resistance (Rds on) is 8.5mOhm at Vgs=4.5V and Id=15A.

What package type is the IRF7809A available in?

The IRF7809A is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also known as 8-SO.

What is the operating temperature range of the IRF7809A?

The operating junction and storage temperature range is -55°C to 150°C.

What is the gate charge of the IRF7809A?

The total gate charge is 75nC maximum at Vgs=5V, Id=15A, Vds=16V.

Is the IRF7809A RoHS compliant?

The component is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

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