IRF7807ZTRPBF N-Channel MOSFET rated for 30V drain-source voltage and 11A continuous drain current. Features low on-resistance of 13.8mOhm at 10V gate drive.
Mfr Part #:

IRF7807ZTRPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET rated for 30V drain-source voltage and 11A continuous drain current. Features low on-resistance of 13.8mOhm at 10V gate drive.
✓ Total Stock: 4,887 pcs
$ Price Range: $0.26 - $0.95

IRF7807ZTRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,050 pcs
3050 pcs On Request 1 On Request On Request 1445 On Request On Request
Non-Authorised Inventory information
1,837 pcs
1837 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7807ZTRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF7807ZTRPBF Description

Short technical summary and product information.

The IRF7807ZTRPBF is an N-Channel MOSFET from Infineon Technologies' HEXFET family. It is designed for applications such as control FET for notebook processor power and synchronous rectifier in graphics cards and POL converters.

 

Key electrical specifications: drain-source voltage 30V, continuous drain current 11A at 25°C (8.7A at 70°C), pulsed drain current 88A. On-resistance is 13.8mOhm max at 10V gate drive and 18.2mOhm max at 4.5V. Gate threshold voltage ranges from 1.35V to 2.25V. Total gate charge is 11nC max.

 

Package and thermal: surface mount in 8-SOIC package (8-SO). Power dissipation 2.5W at 25°C ambient, derated to 1.6W at 70°C. Operating junction temperature range -55°C to 150°C. Thermal resistance junction-to-ambient 50°C/W.

 

Compliance: the device is lead-free and RoHS3 compliant (unverified). Moisture sensitivity level is 1 (unlimited). Suitable for high-efficiency power conversion.

IRF7807ZTRPBF Quick Information

Product Type: MOSFET
Canonical Name: IRF7807ZTRPBF N-Channel MOSFET
Subcategory: Single MOSFET

IRF7807ZTRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free (from datasheet)

IRF7807ZTRPBF Estimated Pricing

Qty Low High
1+ $0.95 $0.95
4,000+ $0.29 $0.29
8,000+ $0.27 $0.27
12,000+ $0.26 $0.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7807ZTRPBF Features

  • 30V drain-source breakdown voltage.
  • 11A continuous drain current at 25°C.
  • Low on-resistance of 13.8mOhm at 10V.
  • Surface mount 8-SOIC package.
  • Operating temperature range -55°C to 150°C.

IRF7807ZTRPBF Applications

  • Control FET for notebook processor power.
  • Synchronous rectifier in graphics cards.
  • POL converters in networking systems.
  • High-efficiency DC-DC conversion.

IRF7807ZTRPBF FAQs

8 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the package type?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the device RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

1.35V minimum, 1.8V typical, 2.25V maximum at ID=250µA.

What is the on-resistance at 10V gate drive?

13.8mOhm maximum at VGS=10V, ID=11A.

What is the total gate charge?

11nC maximum at VGS=4.5V, VDS=15V, ID=8.8A.

What is the continuous drain current at 70°C?

8.7A.

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