| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
234 pcs
|
234 pcs | On Request | 1 | On Request | On Request | 948 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IRF7807ZPBF is a 30V N-channel HEXFET power MOSFET designed for high-efficiency power management applications. It delivers a continuous drain current of 11A at 25°C and features a maximum drain-to-source on-resistance of 13.8mOhm at VGS=10V, with typical values as low as 11mOhm. The device is also characterized at 4.5V gate drive, achieving 18.2mOhm max on-resistance, making it suitable for low-voltage gate drive circuits.
This MOSFET offers fast switching performance with typical rise and fall times of 6.2ns and 3.1ns respectively, and a low gate charge of 7.2nC typical. It is fully avalanche-rated with a single-pulse avalanche energy of 63mJ. The device is housed in a standard 8-SOIC surface-mount package with a junction-to-ambient thermal resistance of 50°C/W.
Typical applications include control FET for notebook processor power, synchronous rectifier for graphics cards, and point-of-load converters in networking and telecommunication systems. The IRF7807ZPBF is RoHS3 compliant and has an MSL of 1 (unlimited).
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 11A at TA=25°C with VGS=10V, and 8.7A at TA=70°C.
The typical on-resistance is 11mOhm with a maximum of 13.8mOhm at VGS=10V and ID=11A. At VGS=4.5V and ID=8.8A, typical is 14.5mOhm with a maximum of 18.2mOhm.
The IRF7807ZPBF is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also referred to as 8-SO.
The junction operating temperature range is -55°C to 150°C.
The IRF7807ZPBF is listed as RoHS3 compliant, though this is unverified from the datasheet.
The gate threshold voltage (VGS(th)) ranges from 1.35V minimum to 2.25V maximum, with a typical value of 1.8V at VDS=VGS and ID=250µA.