| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Vgs(th) (Max) @ Id |
The Infineon IRF7807VTRPBF is a HEXFET® series N-Channel MOSFET. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8.3A at 25°C. The on-resistance (Rds On) is a maximum of 25mOhm at 7A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA, and the maximum gate-to-source voltage is ±20V. The maximum power dissipation is 2.5W at ambient temperature.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC package and is designed for surface mounting. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.
This component is suitable for various electronic applications requiring efficient switching and power management. Its specifications make it a reliable choice for designs needing a robust N-channel MOSFET in a standard surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) at 25°C is 8.3A.
The maximum on-resistance (Rds On) is 25mOhm at 7A and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C.
The IRF7807VTRPBF is in an 8-SOIC package and is designed for surface mounting.